X射线反射率
钝化
材料科学
退火(玻璃)
椭圆偏振法
薄膜
分析化学(期刊)
铝
硅
基质(水族馆)
氧化物
图层(电子)
X射线光电子能谱
光电子学
化学工程
复合材料
纳米技术
化学
冶金
工程类
地质学
海洋学
色谱法
作者
Koji Arafune,Sho Kitano,Haruhiko Yoshida,Atsushi Ogura,Yasushi Hotta
标识
DOI:10.7567/1347-4065/ab50ec
摘要
We studied the effect of post-deposition annealing (PDA) on the electrical property and the structure of aluminum oxide (AlOx) passivation films prepared by atomic layer deposition with various temperatures. Surface recombination velocity (Smax), interface trap density (Dit), and fixed charge density (Qeff/q) before and after the PDA were evaluated employing lifetime and capacitance–voltage measurements. The structural change by the PDA was investigated by a Stokes ellipsometer and X-ray reflectivity (XRR) measurements at SPring-8. The Smax of all samples was improved by the PDA. The improvement of Smax in the samples deposited at the temperature of 200 °C and 300 °C was due to the Dit decrease, but that in the sample deposited at the temperature of 25 °C was due to both the Dit decrease and the Qeff/q increase. From the XRR measurements, it revealed that the formation of the interfacial thin layer is essential for the appearance of negative fixed charges.
科研通智能强力驱动
Strongly Powered by AbleSci AI