逐次逼近ADC
有效位数
冗余(工程)
计算机科学
电子工程
二进制数
电容器
线性
电气工程
工程类
数学
算术
CMOS芯片
电压
操作系统
作者
Guoyao Wu,Ziwei Li,Yutong Zhao,Fan Ye,Junyan Ren
标识
DOI:10.1109/asicon52560.2021.9620444
摘要
The paper presents a 5-bit high-linearity, binary-recombination-redundancy Sub-SAR ADC in 300MS/s, 14-bit Pipelined-SAR ADC in TSMC 28nm process. The highlight of the paper is the proposed high-linearity Sub-SAR ADC using binary recombination redundancy technique with high-speed SAR logic. In addition, the proposed high-speed SAR logic is energy-efficient. In this paper, the requirement proposed by C. Liu in 2015 is reconsidered, and after experimental simulation, a new requirement of the recombination capacitor cells removed from the MSB or sub-MSB is presented. It should satisfy the sum of a combination of the power-of-2 number of B, instead of the power-of-2 number of B. At 0.9V supply and 300MS/s, the proposed Sub-SAR ADC consumes 1.62mW, using a sampling capacitor array of 1.92pF at the input sine wave of ±0.3V. It achieves SNDR of 75.5dB and SNDR of 74dB at low and Nyquist frequency respectively, while the 3-stage pipelined-SAR ADC using the proposed Sub-SAR ADC finally achieves SNDR of 64.3dB, and SNDR of 64dB at low and Nyquist frequency, respectively. The whole ADC consumes 9.4mW, achieving FoMs of 166dB, or FoMw of 24.3fJ/conv.-step.
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