High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications

Threshold switching (TS) devices based on NbO _x materials show intriguing potential for constructing artificial neurons in a neuromorphic machine. However, the high electroforming voltage, the low TS yield, and the poor device uniformity hinder the practical application of NbO _x -based TS devices. In this work, we systematically investigate the effect of film composition on device performance by adjusting the oxygen contents in the NbO _x films. The electroforming voltage decreases with lowering the oxygen content, and the forming yield for activating TS behavior increases without an additional reset process. Moreover, we propose a stacked method by inserting a NbO _y layer with high oxygen content between the low oxygen NbO _x layer and the bottom electrode. The intercalated NbO _y layer serves as a virtual bottom electrode after breakdown, enhancing the local electrical field and improving cycle-to-cycle stability and device-to-device uniformity. These results demonstrate that the device performances are greatly improved by optimizing the oxygen content and structure, guiding for practical applications of NbO _x -based TS devices in neuromorphic computing.