杰纳斯
凝聚态物理
点反射
铁磁性
单层
霍尔效应
半导体
价带
对称性破坏
材料科学
物理
带隙
纳米技术
电阻率和电导率
量子力学
光电子学
作者
Mei Long,Lili Zhang,Min Xu,Shiquan Feng,Zhenping Chen
标识
DOI:10.1088/1402-4896/ad6ec1
摘要
Abstract The manipulation of the valley degree of freedom has attracted increasing attention in both fundamental scientific research and emerging applications. Here, we conduct first-principles calculations to investigate the structural stability and electronic properties of Janus monolayers of VBXS2 (X = N, P), which exhibit characteristics of ferromagnetic semiconductors, with their valence band maximum positioned at the K/K′ point. Arising from the joint influence of inversion symmetry breaking and time reversal symmetry breaking, exotic spontaneous valley polarization occurs in VBNS2 and VBPS2, with magnitudes of 48.6 meV and 47.6 meV in the top valence band, respectively. Consequently, this phenomenon potentially enables the observation of the anomalous valley Hall effect (AVHE). The unique electronic and valleytronic properties exhibited by Janus VBXS2 propose a feasible experimental avenue for exploring ferromagnetism and valley-related Hall effects within a 2D lattice.
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