铟
光电子学
材料科学
硒化物
纳米技术
工程物理
物理
冶金
硒
作者
Dan Zheng,Peng Chen,Yi Liu,X. Li,Kejing Liu,Zi'ang Yin,Riccardo Frisenda,Qinghua Zhao,Tao Wang
出处
期刊:Journal of materials chemistry. A, Materials for energy and sustainability
[The Royal Society of Chemistry]
日期:2024-01-01
卷期号:12 (28): 16952-16986
被引量:2
摘要
2D InSe, a novel semiconductor with unique and excellent performance. It is pivotal for designing multifunctional devices for future optoelectronics, sensors, and flexible electronics, marking a significant advancement in materials science.
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