光电探测器
材料科学
光电子学
窄带
紫外线
纳米复合材料
带隙
响应度
半导体
薄膜
石墨烯
暗电流
光探测
比探测率
光学
纳米技术
物理
作者
Erjin Zheng,Xiaoyu Zhang,Monica R. Esopi,Chen Cai,Beiying Zhou,Yun‐Sheng Lin,Qiuming Yu
标识
DOI:10.1021/acsami.8b13575
摘要
Narrowband ultraviolet (UV) photodetectors are highly desired in multiple areas. Photodetectors based on organic–inorganic nanocomposites offer high sensitivity, widely adjustable response range, light weight, and low-temperature solution processibility. However, the broad absorption range of organic and inorganic semiconductor materials makes it difficult to achieve a narrowband detection feature for nanocomposite photodetectors. In this work, nanocomposite thin films containing the wide band gap conjugated polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(bithiophene)] (F8T2) blended with wide band gap ZnO nanoparticles (NPs) serve as the active layers of the photodetectors. Narrowband UV photodetectors with high gain and low driving voltage are demonstrated by adopting a symmetric device structure, controlling the active layer composition and microstructure, and manipulating the light penetration depth in the active layer. The fabricated photodetector exhibits a high external quantum efficiency of 782% at 358 nm under a low forward bias of 3 V with the full-width at half-maximum of 16 nm. Combined with a low dark current, a high specific detectivity of 8.45 × 1012 Jones is achieved. The impacts of the F8T2:ZnO NPs weight ratio and the device structure on the UV-selectivity and the device performance are investigated and discussed. Our method offers a pathway to design and fabricate narrowband UV photodetectors.
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