Advanced electric-field scanning probe lithography on molecular resist using active cantilever

平版印刷术 抵抗 悬臂梁 材料科学 纳米技术 光刻 电子束光刻 制作 多重图案 无光罩微影 电场 光电子学 计算机科学 物理 复合材料 病理 医学 量子力学 替代医学 图层(电子)
作者
Marcus Kaestner,Cemal Aydogan,Tzvetan Ivanov,Ahmad Ahmad,Tihomir Angelov,Alexander Reum,Valentyn Ishchuk,Yana Krivoshapkina,Manuel Höfer,Steve Lenk,Ivaylo Atanasov,Mathias Holz,Ivo W. Rangelow
出处
期刊:Journal of Micro-nanolithography Mems and Moems [SPIE - International Society for Optical Engineering]
卷期号:14 (3): 031202-031202 被引量:33
标识
DOI:10.1117/1.jmm.14.3.031202
摘要

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many devices. Driven by the thermally actuated piezoresistive cantilever technology, we have developed a prototype of a scanning probe lithography (SPL) platform which is able to image, inspect, align, and pattern features down to the single digit nanoregime. Here, we present examples of practical applications of the previously published electric-field based current-controlled scanning probe lithography. In particular, individual patterning tests are carried out on calixarene by using our developed table–top SPL system. We have demonstrated the application of a step-and-repeat SPL method including optical as well as atomic force microscopy-based navigation and alignment. The closed-loop lithography scheme was applied to sequentially write positive and negative tone features. Due to the integrated unique combination of read–write cycling, each single feature is aligned separately with the highest precision and inspected after patterning. This routine was applied to create a pattern step by step. Finally, we have demonstrated the patterning over larger areas, over existing topography, and the practical applicability of the SPL processes for lithography down to 13-nm pitch patterns. To enhance the throughput capability variable beam diameter electric field, current-controlled SPL is briefly discussed.
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