P‐5: Reduction of Mura Defects by Controlling the Mechanism of NBTIS of Amorphous‐Oxide TFTs

The experiment results demonstrated that the shift of threshold voltage (Vth), which happened during the NBTIS, can induce the dot mura. Then the mechanism and the improvement of dot mura was discussed. Because the light leakage irradiating onto the active layer would affect the Vth, so the mura can be improved by optimizing the process and the design structure.