跨导
材料科学
场效应晶体管
晶体管
光电子学
纳米电子学
基质(水族馆)
前线(军事)
电压
门控
阈下传导
阈值电压
纳米技术
电气工程
物理
地质学
工程类
气象学
海洋学
生物
生理学
作者
Shihyun Ahn,F. Ren,Janghyuk Kim,Sooyeoun Oh,Jihyun Kim,Michael A. Mastro,S. J. Pearton
摘要
Field effect transistors (FETs) using SiO2 and Al2O3 as the gate oxides for the back and front sides, respectively, were fabricated on exfoliated two-dimensional (2D) β-Ga2O3 nano-belts transferred to a SiO2/Si substrate. The mechanical exfoliation and transfer process produced nano-belts with smooth surface morphologies and a uniform low defect density interface with the SiO2/Si substrate. The depletion mode nanobelt transistors exhibited better channel modulation with both front and back gates operational compared to either front or back-gating alone. The maximum transconductance was ∼4.4 mS mm−1 with front and back-gating and ∼3.7 mS mm−1 with front-gating only and a maximum drain source current density of 60 mA mm−1 was achieved at a drain-source voltage of 10 V. The FETs had on/off ratios of ∼105 at 25 °C with gate-source current densities of ∼2 × 10−3 mA mm−1 at a gate voltage of −30 V. The device characteristics were stable over more than a month for storage in air ambient and the results show the potential of 2D β-Ga2O3 for power nanoelectronics.
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