Ferroelectricity-Defects Synergistic Artificial Synapses for High Recognition Accuracy Neuromorphic Computing

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm of artificial synapses. On one hand, the resistance change of ferroelectric memristors mainly depends on the polarization reversal. On the other hand, the defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with the polarization reversal, thereby change the interface potential barrier. Thus, it is both desirable and necessary to investigate the synergistic effect of ferroelectricity and defects. Here, we prepare BaTiO