Flexible Memristor-Based Nanoelectronic Devices for Wearable Applications: A Review

记忆电阻器 瓶颈 可穿戴计算机 计算机科学 神经形态工程学 数码产品 可穿戴技术 人工神经网络 计算机体系结构 电子工程 工程类 嵌入式系统 电气工程 人工智能
作者
Zhaowei Rao,Xufei Wang,Shuangsuo Mao,Jiajia Qin,Yusheng Yang,Mingnan Liu,Chuan Ke,Yong Zhao,Bai Sun
出处
期刊:ACS applied nano materials [American Chemical Society]
卷期号:6 (20): 18645-18669 被引量:14
标识
DOI:10.1021/acsanm.3c03397
摘要

In the high-tech and intelligent era of the 21st century, as one of the important electronic devices, wearable electronic products can effectively improve work efficiency and quality of life. Since memristors have broad application prospects in information storage, neural synapses, neural networks, neuromorphic computation, electronic skin (e-skin), and brain-like chips, the development of flexible electronic devices based on memristors has received extensive attention. However, the incompatibility between the flexible substrate and the functional layer, the performance degradation after repeated bending, and the instability of devices in the biological environment greatly limit the commercial application of flexible memristors. In this review, the characteristics and applications of different types of functional layer nanomaterial-based memristors are first analyzed, and the preparation and integration of the devices are discussed. Then the development bottleneck of flexible memristors is introduced, and corresponding solutions are proposed. Finally, we look forward to the development of intelligent flexible memristors and point out the direction for the development of wearable electronic products based on flexible memristors, which promotes research of flexible memristors in artificial intelligence.
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