材料科学
钻石
热导率
拉曼光谱
金刚石材料性能
化学气相沉积
光电子学
宽禁带半导体
图层(电子)
微晶
复合材料
光学
冶金
物理
作者
Mei Wu,Ke Cheng,Ling Yang,Bin Hou,Xinchuang Zhang,Ping Wang,Meng Zhang,Qing Zhu,Xuefeng Zheng,Yansheng Hu,Xiaohua Ma,Yue Hao
摘要
A 1.5-μm polycrystalline diamond was deposited on the AlGaN/GaN heterojunction on the SiC substrate with a 20-nm SiN dielectric. A 4.9% increase in 2DEG density after the diamond growth due to the increase in tensile strain of the GaN layer is confirmed by micro-Raman measurements. The interfacial analysis through the transmission electron microscopy and electron energy loss spectroscopy shows a thickness reduction in the SiN layer of ∼1.7 nm, which converts to a thin SiC layer at the diamond/SiN interface, and no carbon diffusion is found in the SiN layer after the diamond growth. Device simulation using the thermal properties extracted by time domain thermoreflectance predicts a temperature drop of 17.1 °C when the diamond only covers the device access region and reveals that the improvement of thermal boundary resistance is much more effective than that of the diamond thermal conductivity for the top-side heat spreading, which is mainly due to the limited thickness of the top diamond film.
科研通智能强力驱动
Strongly Powered by AbleSci AI