计算机科学
非易失性存储器
冯·诺依曼建筑
电子线路
可靠性(半导体)
加密
记忆电阻器
电阻随机存取存储器
横杆开关
计算机数据存储
电子工程
计算机硬件
电气工程
电压
电信
计算机网络
工程类
物理
操作系统
功率(物理)
量子力学
作者
Mario Lanza,Abu Sebastian,Wei Lü,Manuel Le Gallo,Meng‐Fan Chang,Deji Akinwande,Francesco Maria Puglisi,Husam N. Alshareef,Ming Liu,J.B. Roldán
出处
期刊:Science
[American Association for the Advancement of Science]
日期:2022-06-02
卷期号:376 (6597)
被引量:410
标识
DOI:10.1126/science.abj9979
摘要
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
科研通智能强力驱动
Strongly Powered by AbleSci AI