比较器
CMOS芯片
PMOS逻辑
NMOS逻辑
偏移量(计算机科学)
前置放大器
磁滞
电气工程
电压
计算机科学
比较器应用
拓扑(电路)
物理
电子工程
工程类
晶体管
凝聚态物理
放大器
程序设计语言
作者
M. Oz,Edoardo Bonizzoni,Franco Maloberti,Alper Akdikmen,Jianping Li
标识
DOI:10.1109/icecs53924.2021.9665571
摘要
A low offset voltage comparator with programmable hysteresis is analyzed, simulated, and presented. The comparator employs a new method for creating the hysteresis and its low-to-high and high-to-low transition threshold levels can be controlled independently even after fabrication. The circuit uses an NMOS and a PMOS preamplifier to accomplish the rail-to-rail operation. The comparator is designed and simulated in a conventional $0.13-\mu\mathrm{m}$ CMOS process with a 3.3-V supply voltage. Monte Carlo simulations show that the comparator's random offset is $46.3\ \mu\mathrm{V}$ and its response time is 137 ns when the hysteresis is set to zero. The static current consumption is $11.2\ \mu\mathrm{A}$ from a 3.3-V power supply. All the hysteresis levels are obtained with good precision.
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