A One Step Method to Produce Boron Emitters

A one-step method to obtain boron emitters for n-type solar cells based on the use of boron tribromide (BBr3) as a dopant source is developed. During this study several experimental parameters are varied. It is observed that besides the diffusion temperature, the nitrogen gas flux and the BBr3 bubbler temperature have a significant impact on the obtained emitter properties. Using the adequate experimental conditions a homogenous boron emitter without boron rich layer (BRL), a sheet resistance of 77 Ω sq−1 and a dark saturation current <100 fA cm−2 is obtained.