The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide

Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (< 100 °C) spatial atomic layer deposition of alumina from tri-methyl aluminum and water. The water partial pressure and the exposure time were identified as the critical parameters in this process.