光致发光
材料科学
硅
电介质
极化(电化学)
不对称
光电子学
质量(理念)
光学
物理
量子力学
物理化学
化学
作者
Liangqiu Zhu,Shuai Yuan,Cheng Zeng,Jinsong Xia
标识
DOI:10.1002/adom.201901830
摘要
Abstract In this paper, a dielectric metasurface is demonstrated to manipulate the photoluminescence of the G‐centers introduced by nanopatterning of crystalline silicon. The metasurface consists of asymmetric holes arranged in a square array, which can transform the bound states in the continuum (BICs) with infinite quality factor to a quasi‐BICs, while maintaining high quality factor of the optical resonance. Compared with the photoluminescence of G‐centers with nonresonance enhancement, ≈40 times photoluminescence enhancement is achieved, accompanied by a near‐zero threshold at cryogenic temperature. In addition, the polarization of the photoluminescence is controlled by the structural asymmetry. These findings provide a novel approach to enhance and manipulate the photoluminescence of G‐centers and may anticipate for realizing light source in silicon.
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