Large-Area Molecular Junctions: Synthesizing Integrated Circuits for Next-Generation Nonvolatile Memory

The development of high-speed, nonvolatile memory devices with low power consumption remains a significant challenge for next-generation computing. A recent study reported molecular switches operating at low voltages in large-area junctions by coupling supramolecular structural changes and counterion migration to bias-dependent redox, culminating in proof-of-concept memory comprising self-assembled monolayers.