材料科学
光电子学
极化(电化学)
各向异性
功勋
超短脉冲
光开关
拉曼光谱
透射率
光学
激光器
物理
物理化学
化学
作者
Chenxi Zhang,Hao Ouyang,Runlin Miao,Yizhen Sui,Hao Hao,Yuxiang Tang,Jie You,Xin Zheng,Zhongjie Xu,Xiang’ai Cheng,Tian Jiang
标识
DOI:10.1002/adom.201900631
摘要
Abstract The deceptively simple tin selenide (SnSe) film has emerged as an appealing 2D material with a narrow bandgap, high charge carrier mobility, and significant thermoelectric figure of merit. In particular, compared with most commonly investigated 2D materials, SnSe with a puckered honeycomb structure possesses a lower lattice symmetry, resulting in prominent in‐plane anisotropy. Herein, with polarization‐dependent Raman spectroscopy and polarization‐dependent nonlinear absorption measurements, pronounced polarization‐dependent nonlinear optical properties of a SnSe flake are demonstrated originating from the anisotropic optical transition probability of SnSe, which is confirmed by ultrafast polarization‐dependent pump–probe experiments. Furthermore, a novel SnSe‐based all‐optical switch is proposed and experimentally explored. Specifically, due to the polarization‐dependent nonlinear optical response of SnSe, this all‐optical switch can access the “ON” and “OFF” modes of continuous‐wave signal light (633 nm, 13 µW) by altering the polarization of the switching light (800 nm, 65 fs, 1 kHz, 34 GW cm −2 ), rather than modifying its intensity, achieving an unexpectedly high ON/OFF ratio (the difference of the normalized transmittance of signal light between “ON” and “OFF” modes) of 44%. This work opens up real perspectives for versatile optoelectronic devices based on SnSe materials.
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