多稳态
记忆电阻器
维数之咒
电荷(物理)
焊剂(冶金)
物理
电容器
控制理论(社会学)
统计物理学
电压
非线性系统
计算机科学
材料科学
量子力学
机器学习
人工智能
冶金
控制(管理)
作者
Mo Chen,Mengxia Sun,Han Bao,Yihua Hu,Bocheng Bao
出处
期刊:IEEE Transactions on Industrial Electronics
[Institute of Electrical and Electronics Engineers]
日期:2020-03-01
卷期号:67 (3): 2197-2206
被引量:177
标识
DOI:10.1109/tie.2019.2907444
摘要
In this paper, from a new perspective of flux and charge, we present in-depth analyses of two ideal memristor emulators and the fifth-order memristive Chua's circuit constructed based on them. The constitutive flux-charge relations of the two adopted memristor emulators are first formulated, and their initial-dependent characteristics are numerically revealed and experimentally verified. Thereafter, with these two constitutive relations, a third-order dimensionality decreasing flux-charge model for the fifth-order memristive Chua's circuit is constructed, in which five extra constant system parameters are introduced to indicate the initial states of the five dynamic elements. Numerical simulations confirm that this newly constructed model possesses several determined equilibria and maintains the initial-dependent dynamics of the original voltage-current model. Thus, the complex and sensitive initial state-related extreme multistability phenomenon can be deeply explored through theoretical analyses and hardware measurements. It is demonstrated that the sensitive extreme multistability phenomenon becomes detectable in the flux-charge domain, which is efficient for exploring the inner mechanisms and further seeking possible applications of this special phenomenon.
科研通智能强力驱动
Strongly Powered by AbleSci AI