压控振荡器
噪声整形
逐次逼近ADC
CMOS芯片
电子工程
带宽(计算)
晶体管
功率消耗
计算机科学
相位噪声
电气工程
工程类
功率(物理)
电压
电容器
物理
电信
量子力学
作者
Haoran Yu,Zhijie Chen,Masaya Miyahara,Akira Matsuzawa
标识
DOI:10.1587/transfun.e99.a.2473
摘要
This paper proposes a SAR-VCO hybrid 1-1 MASH ADC architecture, where a fully-passive 1st-order noise-shaping SAR ADC is implemented in the first stage to eliminate Op-amp. A VCO-based ADC quantizes the residue of the SAR ADC with one additional order of noise shaping in the second stage. The inter-stage gain error can be suppressed by a foreground calibration technique. The proposed ADC architecture is expected to accomplish 2nd-order noise shaping without Op-amp, which makes both high SNDR and low power possible. A prototype ADC is designed in a 65nm CMOS technology to verify the feasibility of the proposed ADC architecture. The transistor-level simulation results show that 75.7dB SNDR is achieved in 5MHz bandwidth at 60MS/s. The power consumption is 748.9µW under 1.0V supply, which results in a FoM of 14.9fJ/conversion-step.
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