电阻随机存取存储器
数据保留
材料科学
非易失性存储器
电子工程
电阻式触摸屏
计算机科学
随机存取存储器
光电子学
电气工程
电压
工程类
计算机硬件
计算机视觉
作者
Young‐Bae Kim,Seung Ryul Lee,Dongsoo Lee,Chang Bum Lee,Man Chang,Ji Hyun Hur,Myung‐Jae Lee,Gyeong‐Su Park,Chang Jung Kim,U‐In Chung,In-Kyeong Yoo,Kinam Kim
出处
期刊:Symposium on VLSI Technology
日期:2011-06-14
卷期号:: 52-53
被引量:134
摘要
We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >104s at 200°C, and calculated bit error rate below 10−11.
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