过电位
塔菲尔方程
电化学
材料科学
氢
化学
化学物理
异质结
纳米技术
物理化学
光电子学
电极
有机化学
作者
Zongpeng Wang,Beibei Xiao,Zhiping Lin,Yaping Xu,Yan Lin,Fanqi Meng,Qinghua Zhang,Lin Gu,Baizeng Fang,Shaojun Guo,Wenwu Zhong
标识
DOI:10.1002/anie.202110335
摘要
Abstract PtSe 2 is a typical noble metal dichalcogenide (NMD) that holds promising possibility for next‐generation electronics and photonics. However, when applied in hydrogen evolution reaction (HER), it exhibits sluggish kinetics due to the insufficient capability of absorbing active species. Here, we construct PtSe 2 /Pt heterointerface to boost the reaction dynamics of PtSe 2 , enabled by an in situ electrochemical method. It is found that Se vacancies are induced around the heterointerface, reducing the coordination environment. Correspondingly, the exposed Pt atoms at the very vicinity of Se vacancies are activated, with enhanced overlap with H 1s orbital. The adsorption of H . intermediate is thus strengthened, achieving near thermoneutral free energy change. Consequently, the as‐prepared PtSe 2 /Pt exhibits extraordinary HER activity even superior to Pt/C, with an overpotential of 42 mV at 10 mA cm −2 and a Tafel slope of 53 mV dec −1 . This work raises attention on NMDs toward HER and provides insights for the rational construction of novel heterointerfaces.
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