材料科学
双层
导电体
复合数
聚乙烯吡咯烷酮
电解质
复合材料
记忆电阻器
图层(电子)
焦耳加热
电极
聚合物
光电子学
导电聚合物
蛋白质丝
溶解
纳米技术
电阻随机存取存储器
化学工程
高分子化学
电气工程
化学
膜
生物化学
物理化学
工程类
作者
Yiming Zheng,Xiangyu Guo,Jiandong Jiang,Yujun Fu,Qi Wang,Deyan He
摘要
The basic unit of information in conductive bridge random access memory based on the redox mechanism of metal ions is physically stored in a conductive filament (CF). Therefore, the overall performance of the device is indissolubly related to the properties of such CFs, as unreliable performance often originates from unstable CFs behavior. However, accurately controlling the dissolution of CFs during device operation can be challenging due to their non-uniformity. This paper proposes a type of memristor based on a solid polymer electrolyte with a polyvinylpyrrolidone/polyvinyl alcohol composite layer structure. The properties of the composite layer are employed to regulate the number of CFs and the growth/fracture location, while the damage to the device by Joule heat is prevented. The device exhibits low operating voltage (0.5 V), stable switching conditions (2000 cycles), and a long holdup time (>3 × 104 s).
科研通智能强力驱动
Strongly Powered by AbleSci AI