光激发
材料科学
电子转移
半导体
压力(语言学)
超短脉冲
联轴节(管道)
电子
化学物理
超快电子衍射
载流子
电荷(物理)
纳米技术
光电子学
衍射
电子衍射
化学
复合材料
光学
物理化学
激发
物理
激光器
语言学
哲学
量子力学
作者
Jun Heo,Alekos Segalina,Doyeong Kim,Doo‐Sik Ahn,Key Young Oang,Sungjun Park,Hyungjun Kim,Hyotcherl Ihee
标识
DOI:10.1002/advs.202400919
摘要
Metal-semiconductor interfaces are crucial components of optoelectronic and electrical devices, the performance of which hinges on intricate dynamics involving charge transport and mechanical interaction at the interface. Nevertheless, structural changes upon photoexcitation and subsequent carrier transportation at the interface, which crucially impact hot carrier stability and lifetime, remain elusive. To address this long-standing problem, they investigated the electron dynamics and resulting structural changes at the Au/TiO
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