带隙
拉曼光谱
材料科学
相变
半导体
相(物质)
凝聚态物理
氮化物
原子轨道
结晶学
化学物理
光电子学
分子物理学
化学
纳米技术
光学
物理
电子
有机化学
图层(电子)
量子力学
作者
Gang Wu,Kuo Bao,Lu Wang,Xianli Li,Chao Liu,Sheng Wang,Chunhong Xu
标识
DOI:10.1016/j.physb.2023.414883
摘要
The bandgap of a semiconductor is significantly regulated by pressure. Novel structures and properties are introduced upon compression. To figure out the bandgap evolution and phase transition of Ca3N2 under pressure, Raman spectra, UV–Vis absorption spectra and theoretical calculations were performed up to 50 GPa. Pmn21 structure emerges after 11.7 GPa, and it coexists with Ia-3 structure until 14.1 GPa. Totally transformation into P-3m1 occurs at 22.8 GPa. Under pressure, the bandgap undergoes a complicated shift that widens before 13 GPa and narrows after 14 GPa. The competition between the shorten bond length and the enhanced orbitals coupling is responsible for the non-monotonic change in the bandgap. Our results offer fresh insight into the high pressure behavior of alkaline-earth metal nitride compounds with the example of Ca3N2.
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