n‐Si/SiOx/CoOx‐Mo Photoanode for Efficient Photoelectrochemical Water Oxidation (Small 3/2024)

Photoelectrochemical Water Oxidation In article number 2304376, Kin Ho Lo, Hui Pan, and co-workers report a metal-insulator-semiconductor (MIS) structure photoanode (n-Si/SiOx/CoOx-Mo) to show a high photovoltage of 650 mV, saturation current density of 27.6 mA cm−2, and fill factor of 0.62 in 1.0 M K3BO3 because the energy barrier, charge transfer, reaction kinetics, and active sites are dramatically increased by the Mo-incorporation. And the Mo-incorporated photoanode is also highly stable.