材料科学
光伏系统
钝化
光电子学
异质结
工程物理
带隙
半导体
纳米技术
吸收(声学)
制作
碲化镉光电
锑
载流子
锑
电气工程
医学
替代医学
工程类
图层(电子)
病理
复合材料
冶金
作者
Junwei Chen,Gaoyang Li,Zhiheng Xu,Chenchen Xu,Faisal Naveed,Бо Лю,Yan Zhang,Ru Zhou,Chong Chen,Mingtai Wang,Jun Xu,Liang Li
标识
DOI:10.1002/adfm.202313676
摘要
Abstract Solar cells comprising earth‐abundant and non‐toxic elements with applicable bandgaps and high absorption coefficients have attracted considerable interest over the past several decades and are important devices for addressing the future demand for clean and renewable energy. Antimony sulfide (Sb 2 S 3 ) crystal material effectively meets these requirements owing to its suitable bandgap, high absorption coefficient, high electron and hole mobilities, earth abundance, and excellent stability. Solution‐processed Sb 2 S 3 films are essential to facilitate the fabrication of low‐cost, large‐scale, and high‐efficiency photovoltaic devices, but suffer from several shortcomings of large intrinsic defects, high interfacial barrier, and atomic mismatch, uncontrollable film thickness, and crystal orientation. In this review, a systematic overview of the fundamental properties of solution‐processed Sb 2 S 3 materials is presented, and then interface engineering, defect passivation and control strategies, crystal orientation and modulation methods, device structure, and the performance of Sb 2 S 3 solar cells are focused, highlighting the primary advancements and major challenges based on this technology. Finally, several creative perspectives and constructive innovation strategies for future research on Sb 2 S 3 photovoltaic devices are provided, indicating a roadmap for the practical application of other inorganic semiconductor heterojunction thin film solar cells.
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