Photonic BiCMOS Technology with 80 GHz Ge Photo Detectors and 100 GHz Ge Electro-Absorption Modulators

We demonstrate a Photonic BiCMOS technology featuring waveguide-coupled germanium electro-absorption modulators and photo detectors with respective 3-dB bandwidths of 100 GHz and 80 GHz, monolithically integrated with high-performance SiGe-heterojunction bipolar transistors and 0.25 μm CMOS. The electro-absorption modulators feature insertion losses of 7.5 dB and dynamic extinction ratios of 3.6dB at 2 V pp and λ = 1600 nm. We demonstrate that there is no degradation of the baseline technology ‘SG25H5EPIC’ in terms of electronic device yield or performance.