Study on N-Type MOS Capacitor in 55NM CMOS

This work performs fundamental physical measurements test and electrical measurements test on a N-Type metal oxide semiconductor capacitor (MOSCAP). Experimental results show that the thermally grown oxide is thicker when the doping energy decrease with the fixed doping dosage; the oxide is thicker when the doping dosage increase with the fixed doping energy. When the capacitor is larger, the range (which stands for the voltage dependence) is also larger, and the requirement for capacitor and the range is a tradeoff (the smaller range is the better). Various gate oxide conditions have also been examined, and the result shows that as the gate oxide shrinking down, the break down voltage appear some abnormal, which suspect the interface quality is not so excellent and the corner rounding for the gate oxide is worse.