Highly Oriented VO[sub 2] Thin Films Prepared by Electrodeposition

Ultrathin films were grown on Si(001) substrates by the electrodeposition technique. The method includes the annealing of a xerogel precursor deposit, mainly composed of , at . The effective formation of the monoclinic phase, after annealing, is strongly dependent on the time of storage in air. The films so obtained have [011]-preferred orientation and undergo a metal–insulator transition. The resistance change as a function of temperature is characterized by a broad hysteresis where two transition temperatures can be identified: and .