材料科学
异质结
钙钛矿(结构)
波长
光电子学
纳米技术
化学工程
工程类
作者
Xueshuo Fan,Enliu Hong,Peixi Wang,Xiaosheng Fang
标识
DOI:10.1002/adfm.202415491
摘要
Abstract Lateral heterostructures based on halide perovskites exhibit great potential in the advancement of next‐generation optoelectronic devices. Among them, mixed dimensional perovskite heterostructures, particularly 2D‐3D ones, offer promising opportunities for semiconductor integration and device miniaturization by combining the advantages of 2D and 3D perovskites. However, the controllable and rapid growth of 2D‐3D halide perovskite lateral heterostructures has not yet been achieved. This study presents an efficient strategy that integrates one‐pot method and space‐confined process to enable liquid‐phase lateral growth of a series of 2D Ruddlesden‐Popper (RP) perovskites on the sides of 3D perovskites. The photodetectors (PDs) based on (BA) 2 MA n‐1 Pb n Br 3n+1 ‐MAPbBr 3 ( n = 1, 2, 3) lateral heterostructures demonstrate outstanding optoelectronic performance, featuring an on/off ratio of up to 1.4 × 10 4 , a high responsivity of 4.4 A W −1 and a detectivity of 3.9 × 10 13 Jones at 425 nm, 3 V bias. In addition, by combining the tunable dual‐band photoresponse characteristic with the dual‐beam irradiation modes, a wavelength‐tunable light communication system based on the lateral heterostructure PDs is realized. This work provides a convenient and reliable approach for the direct growth of mixed‐dimensional halide perovskite heterostructures, further demonstrating their potential in high‐performance detecting and dual‐band sensing fields.
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