光电子学
材料科学
光隔离器
光子学
光子集成电路
光功率
调制(音乐)
波导管
带宽(计算)
光学
电子工程
光纤
计算机科学
声学
电信
物理
工程类
激光器
作者
Liang Zhang,Yongzhou Xue,Zewei Chen,Yanan Guo,Junxi Wang,Jinmin Li,Jianchang Yan
标识
DOI:10.1002/lpor.202401952
摘要
Abstract Acousto‐optic modulation (AOM) can tailor acoustic and optical domains, promising applications from signal processing to quantum transduction. Advances in integrated circuits technologies have facilitated minimization and integration of acousto‐optic devices, paving ways for their applications in large‐scale hybrid integrated photonic‐phononic systems. Recently, integrated AOM is demonstrated with promising performance on various integrated piezoelectric materials. However, their optical conversion efficiencies remain significantly below unity. Achieving high efficiency necessitates strong mode‐coupling over long interaction space, which requires strong confinement and minimizing losses for both acoustic and optical fields in integrated structures. This is challenging for most integrated material platforms. In this work, efficient AOM is demonstrated using semi‐insulating gallium nitride (GaN) on sapphire. By leveraging the sub‐wavelength confinement of both optical and acoustic fields within GaN waveguides, while minimizing optical (0.35 dB ) and acoustic (0.4 dB ) propagation losses, complete optical mode conversion of AOM driven by a 1.67‐mW radio frequency power, setting a benchmark for integrated acousto‐optical modulators, is achieved. Furthermore, the AOM non‐reciprocity is also performed with high non‐reciprocal contrast (10 dB) across a 4‐GHz optical bandwidth. The work offers a robust and efficient acousto‐optic platform, opening new opportunities for integrated quantum transduction, signal processing, and non‐magnetic optical isolation.
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