钝化
重组
晶界
微晶
纳米晶材料
钙钛矿(结构)
材料科学
光致发光
卤化物
金属
载流子
载流子寿命
溶解
化学物理
化学
光电子学
结晶学
无机化学
纳米技术
物理化学
图层(电子)
硅
冶金
微观结构
生物化学
基因
作者
Zhenyi Ni,Shuang Xu,Haoyang Jiao,Hangyu Gu,Chengbin Fei,Jinsong Huang
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2022-09-07
卷期号:8 (36)
被引量:36
标识
DOI:10.1126/sciadv.abq8345
摘要
Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (SGB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average SGB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average SGB by four times, with the lowest SGB of 410 cm/s, which is comparable to surface recombination velocities after passivation.
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