The use of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ layers to improve the performance of CuInSe/sub 2/ cells

The initial results of the modeling of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ cells presently reported can provide considerable insight into the design of these cells. The use of 1 .64-eV bandgap CuIn/sub 1-x/Ga/sub x/Se/sub 2/, layers in the space-charge region to improve open-circuit voltage and at the rear of the base to act as a back-surface field region is discussed. It is shown that the open-circuit voltage can be improved with the use of these layers and that the short-circuit current and fill factor can be significantly influenced by the use of a widegap layer.< >