A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal–semiconductor field effect transistor architecture with a high photoresponsivity ( $2.48\times10$ ⁴ $\text{A}/\text{W}$ ), high external quantum efficiency ( $1.44\times10$ ⁵ ), and high detectivity ( $5.08\times10$ ⁹ Jones) under 213-nm light illumination (437 $\text{W}/\text{m}$ ² ). At 5240 $\text{W}/\text{m}$ ² light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88/36 ms and there is no significant persistent photoconductive effect.