材料科学
钙钛矿(结构)
太阳能电池
光电子学
开路电压
扩散
薄膜
太阳能电池理论
能量转换效率
激子
钙钛矿太阳能电池
半导体
碲化镉光电
太阳能电池效率
电压
纳米技术
凝聚态物理
化学
结晶学
电气工程
物理
工程类
热力学
作者
Takashi Minemoto,Masashi Murata
摘要
Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefore, applied one-dimensional device simulator widely used in the Cu(In,Ga)Se2 solar cells. A high open-circuit voltage of 1.0 V reported experimentally was successfully reproduced in the simulation, and also other solar cell parameters well consistent with real devices were obtained. In addition, the effect of carrier diffusion length of the absorber and interface defect densities at front and back sides and the optimum thickness of the absorber were analyzed. The results revealed that the diffusion length experimentally reported is long enough for high efficiency, and the defect density at the front interface is critical for high efficiency. Also, the optimum absorber thickness well consistent with the thickness range of real devices was derived.
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