带材弯曲
费米能级
X射线光电子能谱
兴奋剂
材料科学
凝聚态物理
带隙
铟
表面状态
二氧化锡
薄膜
准费米能级
费米面
半金属
纳米技术
电子
光电子学
曲面(拓扑)
核磁共振
物理
冶金
超导电性
量子力学
数学
几何学
作者
Takahiro Nagata,Oliver Bierwagen,Mark E. White,Ming‐Fa Tsai,Yoshiyuki Yamashita,Hideki Yoshikawa,Naoki Ohashi,Keisuke Kobayashi,Toyohiro Chikyow,James S. Speck
摘要
To investigate the doping and surface electron accumulation layer properties of tin dioxide (SnO2), the Fermi level and surface band bending of unintentionally-, antimony (Sb)-, and indium (In)-doped SnO2 (101) films were investigated by aluminum and hard x-ray photoelectron spectroscopy, which probe surface and bulk regions, respectively. The Fermi level was above the conduction band minimum (CBM) for unintentionally-doped films and for highly Sb-doped films, which showed the conduction band feature, and deep in the band gap for In-doped films. The band bending and surface Fermi level indicated a surface Fermi level pinning in the CBM.
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