升华(心理学)
材料科学
光电子学
晶体管
电子迁移率
制作
图层(电子)
纳米技术
电气工程
心理学
医学
工程类
病理
电压
替代医学
心理治疗师
作者
Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,Flavien Cozette,N. Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier
标识
DOI:10.1016/j.sse.2021.108210
摘要
We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.
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