Honglin Liu,Zhentao Liu,Meijun Chen,Shensheng Han,Lihong V. Wang
出处
期刊:Photonics Research [The Optical Society] 日期:2019-11-01卷期号:7 (11): 1323-1323被引量:49
标识
DOI:10.1364/prj.7.001323
摘要
The optical memory effect is an interesting phenomenon that has attracted considerable attention in recent decades. Here, we present a new physical picture of the optical memory effect, in which the memory effect and the conventional spatial shift invariance are united. Based on this picture we depict the role of thickness, scattering times, and anisotropy factor and derive equations to calculate the ranges of the angular memory effect (AME) of different scattering components (ballistic light, singly scattered, doubly scattered, etc.), and hence a more accurate equation for the real AME ranges of volumetric turbid media. A conventional random phase mask model is modified according to the new picture. The self-consistency of the simulation model and its agreement with the experiment demonstrate the rationality of the model and the physical picture, which provide powerful tools for more sophisticated studies of the memory-effect-related phenomena and wavefront-sensitive techniques, such as wavefront shaping, optical phase conjugation, and optical trapping in/through scattering media.