纳米线
材料科学
原子层沉积
光电子学
互连
苯并环丁烯
纳米技术
二极管
图层(电子)
钨
制作
电介质
病理
冶金
计算机网络
替代医学
医学
计算机科学
作者
Jianhua Cheng,Dragos Seghete,Myongjai Lee,John B. Schlager,Kristine A. Bertness,Norman A. Sanford,Ronggui Yang,Steven M. George,Y.C. Lee
标识
DOI:10.1016/j.sna.2009.12.038
摘要
We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5–10 μm in length, 80–200 nm in diameter) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALD-alumina)/conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL) wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices, such as nanowire light emitting diodes, nanowire-based field effect transistors, resonators, batteries or biomedical applications.
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