放大器
光电子学
激光器
光子学
光放大器
硅光子学
激光线宽
材料科学
硅
光子集成电路
电子线路
计算机科学
电子工程
电气工程
光学
工程类
物理
CMOS芯片
作者
Songtao Liu,Akhilesh S. P. Khope
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2021-04-01
卷期号:42 (4): 041307-041307
被引量:10
标识
DOI:10.1088/1674-4926/42/4/041307
摘要
Abstract Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature. Driven by the size, weight, power and cost (SWaP-C) requirements, the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward. Several approaches have been proposed and demonstrated to address this issue. In this paper, a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented. Representative device demonstrations, including ultra-narrow linewidth III–V/Si lasers, fully integrated III–V/Si/Si 3 N 4 lasers, high-channel count mode locked quantum dot (QD) lasers, and high gain QD amplifiers will be covered.
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