异质结
材料科学
扫描电子显微镜
纳米线
半导体
纳米颗粒
纳米技术
光电子学
化学工程
分析化学(期刊)
复合材料
化学
色谱法
工程类
作者
Tae‐Hee Han,So-Young Bak,Sangwoo Kim,Se-Hyeong Lee,Yeji Han,Moonsuk Yi
出处
期刊:Sensors
[MDPI AG]
日期:2021-03-17
卷期号:21 (6): 2103-2103
被引量:47
摘要
This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.
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