晶体结构
拓扑(电路)
材料科学
结晶学
Crystal(编程语言)
单晶
拓扑绝缘体
堆积
作者
Alexander Zeugner,Martin Kaiser,Peer Schmidt,Tatiana V. Menshchikova,Igor P. Rusinov,Anton V. Markelov,Wouter Van den Broek,Evgueni V. Chulkov,Thomas Doert,Michael Ruck,Anna Isaeva
标识
DOI:10.1021/acs.chemmater.6b05038
摘要
Structural engineering of topological bulk materials is systematically explored with regard to the incorporation of the buckled bismuth layer [Bi2], which is a 2D topological insulator per se, into the layered BiTeI host structure. The previously known bismuth telluride iodides, BiTeI and Bi2TeI, offer physical properties relevant for spintronics. Herewith a new cousin, Bi3TeI (sp.gr. R3m, a = 440.12(2) pm, c = 3223.1(2) pm), joins the ranks and expands this structural family. Bi3TeI = [Bi2][BiTeI] represents a stack with strictly alternating building blocks. Conditions for reproducible synthesis and crystal-growth of Bi2TeI and Bi3TeI are ascertained, thus yielding platelet-like crystals on the millimeter size scale and enabling direct measurements. The crystal structures of Bi2TeI and Bi3TeI are examined by X-ray diffraction and electron microscopy. DFT calculations predict metallic properties of Bi3TeI and an unconventional surface state residing on various surface terminations. This state emerges as a...
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