静态随机存取存储器
辐射
光电子学
泄漏(经济)
辐射硬化
双闸门
灵敏度(控制系统)
材料科学
电子工程
电气工程
物理
晶体管
工程类
MOSFET
光学
电压
经济
宏观经济学
作者
Daniela Munteanu,Jean‐Luc Autran
标识
DOI:10.1016/j.microrel.2014.07.079
摘要
The Junctionless Double-Gate (JL-DGFET) technology is potentially interesting for future ultra-scaled devices, due to the simplified manufacturing process and reduced leakage currents. In this work, we investigate, for the first time, the sensitivity to radiation of 6T SRAM cells built up of JL-DGFETs. A detailed comparison with SRAMs based on inversion-mode devices (FDSOI and IM-DGFET) is performed. Our simulations indicate that JL-DGFET SRAMs are naturally more immune to radiation than FDSOI SRAMs, but more sensitive to radiation than IM-DGFET SRAMs. (C) 2014 Elsevier Ltd. All rights reserved.
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