电容器
材料科学
瞬态(计算机编程)
有限元法
机械
热点(计算机编程)
连接(主束)
等离子体
电压
GSM演进的增强数据速率
电气工程
薄膜电容器
光电子学
机械工程
物理
工程类
结构工程
计算机科学
电信
操作系统
量子力学
作者
Xiaoguang Qi,S.A. Boggs
摘要
Self-clearing metallized film capacitor technology offers the highest energy density among high voltage capacitor technologies. The primary limitation of this technology under pulse discharge conditions is failure of the plasma sprayed end connections. Transient nonlinear finite element analysis with coupled electric and thermal fields is applied to quantify the temperature rise around a contact spot along the end connection as a function of discharge current, contact spot size, time and distance between contact spots along the contact edge. An analytic approximation is developed to compute these parameters which agrees to within a few percent with the finite element analysis.
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