神经形态工程学
材料科学
晶体管
纳米技术
光电子学
记忆电阻器
薄膜晶体管
电子工程
电气工程
电压
计算机科学
人工神经网络
工程类
人工智能
图层(电子)
作者
Li Guo,Hui Han,Li Qiang Zhu,Yan Guo,Fei Yu,Zheng Ren,Hui Xiao,Zi Yi Ge,Jian Ning Ding
标识
DOI:10.1021/acsami.9b05717
摘要
Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of ∼1.16 fJ with ultrahigh sensitivity of ∼5.4 dB, as is very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.
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