电压
开关电容器
低压
电压倍增器
高压
跌落电压
计算机科学
材料科学
分压器
物理
出处
期刊:IEEE Solid-State Circuits Magazine
[Institute of Electrical and Electronics Engineers]
日期:2016-01-01
卷期号:8 (2): 83-92
被引量:12
标识
DOI:10.1109/mssc.2016.2543065
摘要
In Part 1 of this series [1], a brief history of switched-capacitor voltage multiplier was reviewed starting with Greinacher's voltage doubler in 1914 [2]. It was concluded that the Falke-Dickson [3], [4] parallel voltage multiplier or charge pump was best for integrated circuits where capacitors and switching devices had significant parasitic capacitance [5]. In this Part 2, the structure of integrated switching devices and capacitors is reviewed. An equivalent circuit and power efficiency of the charge pump is discussed in both the ideal and real cases in terms of threshold voltage of switching transistor and parasitic capacitance. Finally, several design optimizations are described.
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