Non‐Volatile ReRAM Devices Based on Self‐Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non‐volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re‐writable, bistable, transparent, and flexible solution‐processed crossbar ReRAM devices utilizing graphene oxide ( GO ) based multilayers as active dielectric layers. The devices employ single‐ or multi‐component‐based multilayers composed of positively charged GO ( N‐GO (+) or NS‐GO (+)) with/without negatively charged GO (‐) using layer‐by‐layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi‐component active layer Au/[ N‐GO (+)/ GO (‐)] n /Al/PES shows higher ON/OFF ratio of ≈10 5 with switching voltage of −1.9 V and higher retention stability (≈10 4 s), whereas the device based on single component (Au/[ N‐GO (+)] n /Al/PES) shows ≈10 3 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi‐component‐based device are attributed to a higher coating surface roughness. The Au/[ N‐GO (+)/ GO (–)] n /Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈10 9 ) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO‐based solutions. It is found that the devices containing MnO 2 in the dielectric layer do not improve the ReRAM performance.