NMOS SiP Epitaxy Process - Optimizing Facet Growth

Phosphorous doped selective epitaxial technology has gained interest recently as the source / drain for NMOS. High, >1E20 atm./cc., Phosphorous doping is required to ensure low contact resistance when metal contacts are formed. The study of contact resistance as a function of temperature and chemical composition of reactants is presented in this paper. Additionally, the phosphorous growth needs to have a facet to prevent any nitride residue during the remaining process flows. In this paper, the faceted growth of high Phosphorous doped Silicon epitaxy using various process schemes is explored.